UHV Molecular Beam Epitaxy & Sputtering System – EIKO

Base pressure: < 1×10-8 Pa
Water-cooled jacket
Electron-guns: 3 kW × 2 (2 cc crucible × 5 for each)
K-cell: 40 cc PBN < 1300 °C
Substrate size: < 1″ square
Substrate temperature: -50 ~ 800 °C
Substrate tilting: ± 20 °
In-situ mask and linear shutter: 3 masks
In-situ analysis: RHEED (30 kV gun)
3 independent thickness monitor for 2 e-guns and K-cell

Department of Electronic Engineering

References:
L.R. Fleet, K. Yoshida, H. Kobayashi, Y. Kaneko, S. Matsuzaka, Y. Ohno, H. Ohno, S. Honda, J. Inoue, A. Hirohata, Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) films, Phys. Rev. B. 87 (2013) 024401. doi:10.1103/PhysRevB.87.024401.